Tevatron Run II termined Friday 30 September at 2pm. CDF ceased to be a data-taking experiment and detector decomissioning is in progress.
However there is interest to measure the annealing of the silicon detector as it is warmed to room temperature after a decade of irridation. This measurement will be of importance to the LHC silicon detector who are planning to warm up their detector to benefit from beneficial annealing. But the data and models for this process are not well known and well understood.
The studies of annealing on the CDF Silicon detector represents an unique opportunity to study a large silicon which has undergone 10 years of irradiation.
Further information can be found in Michelle's proposal PDF
Satyajit Behari,David Christian,Sergo Jindariani,Thomas Junk,Kyle Knoepfel,Mark Mattson,Ankush Mitra,Miguel Mondragon,Jason Nett,Yuri Oksuzian Ignacio Redondo,Benedetto Di Ruzza,Leonard Spiegel,Michelle Stancari,Alexander Sukhanov
Difficulty rated with ****S - * is easy, **** is hard/time-consuming
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**
For the 3 "temperature measurements" done at the end of the annealing,
look at the data in the current plotter ntuples, and make a text
file for each measurement. Something like:
laddername voltage1 current1 voltage2 current2
Take the extra time to write down in a latex file how you did this and
post it.
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***
For each IV scan, produce a simple text file with one
value of current and voltage for each voltage step.
(already done? in progress?)
*** could be split into three parts:
(1) "warm" (daily at 18 degC)
(2) "cold" at end of annealing
(3) Bias scans
Take the extra time to write down in a latex file how you did this and
post it.
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***
Study the IV scans taken cold after the annealing measurement.
Try to link the shape of the IV curve with the IV curves from the
bias scans to extract a value of Vdep before and after annealing.
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*
compare noise before and after annealing from the noise scan data
(Ignacio?) - waiting for noise scan data to be processed.
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*
Make a plot summarizing the current behaviour during annealing at 18 degC
(in progress, michelle)
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**
Write down the procedure followed for the annealing measurement, to be inserted
into a CDF note and/or NIM article. Some archaeology in the e-log
required. Create plots of temperature during warm up and cool down?
Details of power supply work can be left out?
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***
Write the introduction/outline for the annealing NIM article
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For aging paper:
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*
Write paper outline:
*
some ideas . . .
(A) 3 principle measurements
(1) Vdep (noise-vs-bias and signal-vs-bias methods)
(2) S/N (and separate S and N)
(3) I/V at 0degC (current/volume of active silicon, normalized to 0
degC)
(B) need to discuss radiation field measurement and conversion from
lumi to radiation dose
(C) need to present temperature history of the detector
(D) describe beam offset corrections if included
(E) Is the N (noise vs lumi) plot what one expects from the current?
(F) How does the Vdep compare with hamburg model
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****
Using entire run 2 history in current plotter ntuples, make plots
of (I/V at 0 degC) vs luminosity for individual ladders or average
over a layer. Need to use measured temperatures and discard
problematic ladders (pinholes, etc)
Can start from Ignacio's macros.
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*
Update efficiency, S/N, S and N plots with Oscar's latest tree
(in progress?, Kyle)
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**
Compare N (noise) vs lumi to what you would expect from I (current) vs
lumi
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**
Finalize Vdep analysis algorithm and reprocess if needed.
redo extrapolations and slope analysis
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**
Implement beam offset corrections??
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